Electrical behavior of n-GaAs Schottky nanowire in wide temperature range for different contacts

Autores

  • Souad Benykrelef Laboratoire de Micro-électronique Appliquée, Université Djillali Liabés de Sidi Bel Abbés, BP 89, Sidi Bel Abbés, 22000, Algeria
  • Sedik Mansouri Laboratoire de Micro-électronique Appliquée, Université Djillali Liabés de Sidi Bel Abbés, BP 89, Sidi Bel Abbés, 22000, Algeria
  • Hicham Helal Laboratoire de Micro-électronique Appliquée, Université Djillali Liabés de Sidi Bel Abbés, BP 89, Sidi Bel Abbés, 22000, Algeria
  • Abdelaziz Rabehi Laboratoire de Micro-électronique Appliquée, Université Djillali Liabés de Sidi Bel Abbés, BP 89, Sidi Bel Abbés, 22000, Algeria Wireless and Wired Communication and Smart Systems Laboratory, Djelfa university of Algeria, Djelfa, 17000, Algeria
  • Abdelaziz Joti Laboratoire de Micro-électronique Appliquée, Université Djillali Liabés de Sidi Bel Abbés, BP 89, Sidi Bel Abbés, 22000, Algeria
  • Zineb Benamara Laboratoire de Micro-électronique Appliquée, Université Djillali Liabés de Sidi Bel Abbés, BP 89, Sidi Bel Abbés, 22000, Algeria

DOI:

https://doi.org/10.18540/jcecvl9iss4pp15855-01e

Palavras-chave:

n-GaAs, nanowire, Silvaco-Atlas, Schottky diode, I–V characteristics

Resumo

This research aims to study the impact of metal work function ?m on the I–V characteristics of a n-GaAs Schottky nanowire structure, using 3D Silvaco-Atlas software. The electrical characteristics have been performed in a wide temperature range of 300-550K. This allows us to study and discuss the influence of temperature and the metal work function ?m on the performance of our proposed device. The results show a great dependence between ?m and the electrical parameters. A decrease in current is observed with increasing ?m, as well as an increase in barrier height with increasing ?m and a decrease with increasing temperature.

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Publicado

2023-05-24

Como Citar

Benykrelef, S., Mansouri, S., Helal , H., Rabehi, A., Joti , A., & Benamara , Z. (2023). Electrical behavior of n-GaAs Schottky nanowire in wide temperature range for different contacts. The Journal of Engineering and Exact Sciences, 9(4), 15855–01e. https://doi.org/10.18540/jcecvl9iss4pp15855-01e

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General Articles